IPB50R250CPATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details IPB50R250CPATMA1 Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.5V @ 520µA, Power Dissipation (Max): 114W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB50R250CPATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPB50R250CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3 Transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB50R250CPATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH