Technische Details IPB80N04S2H4 INFINEON
Description: IPB80N04 - 20V-40V N-CHANNEL AUT, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V.
Weitere Produktangebote IPB80N04S2H4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IPB80N04S2-H4 | Hersteller : infineon |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB80N04S2-H4 | Hersteller : infineon |
![]() |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
IPB80N04S2-H4 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPB80N04S2-H4 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |