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IPC045N10N3X1SA1

IPC045N10N3X1SA1 Infineon Technologies

DS_IPC045N10N3_2_5.pdf?fileId=db3a30434422e00e01442bf093685208 Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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Technische Details IPC045N10N3X1SA1 Infineon Technologies

Description: MOSFET N-CH 100V 1A SAWN ON FOIL, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 33µA, Supplier Device Package: Sawn on foil, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 100 V.