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IPC60N04S406ATMA1

IPC60N04S406ATMA1 Infineon Technologies


40infineon-ipc60n04s4-06-ds-v01_00-en.pdffileid5546d4624d6fc3d5014d.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 60A Automotive 8-Pin TDSON T/R
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Technische Details IPC60N04S406ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 60A TDSON-8-23, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4V @ 30µA, Supplier Device Package: PG-TDSON-8-23, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V, Qualification: AEC-Q101.

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IPC60N04S406ATMA1 Hersteller : Infineon Technologies IPC60N04S4-06.pdf Description: MOSFET N-CH 40V 60A TDSON-8-23
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101
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