IPI120N04S402AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.59 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.72 EUR |
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Technische Details IPI120N04S402AKSA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TO262-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 158W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 103nC Kind of channel: enhancement Technology: OptiMOS™ T2 Anzahl je Verpackung: 1 Stücke |
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IPI120N04S402AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 158W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 103nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
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