IPI65R420CFDXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IPI65R420CFDXKSA1 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3, Technology: CoolMOS™, Case: PG-TO262-3, Mounting: THT, On-state resistance: 0.42Ω, Power dissipation: 83.3W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±20V, Drain-source voltage: 650V, Drain current: 8.7A, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPI65R420CFDXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IPI65R420CFDXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO262 |
Produkt ist nicht verfügbar |
|
|
|
IPI65R420CFDXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3 Technology: CoolMOS™ Case: PG-TO262-3 Mounting: THT On-state resistance: 0.42Ω Power dissipation: 83.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |