IPI90R1K2C3XKSA1 Infineon Technologies

Description: MOSFET N-CH 900V 5.1A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 310µA, Supplier Device Package: PG-TO262-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V.