Produkte > INFINEON TECHNOLOGIES > IPI90R1K2C3XKSA1
IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1 Infineon Technologies


ipi90r1k2c3_0.9.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPI90R1K2C3XKSA1 Infineon Technologies

Description: MOSFET N-CH 900V 5.1A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 310µA, Supplier Device Package: PG-TO262-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V.

Weitere Produktangebote IPI90R1K2C3XKSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPI90R1K2C3XKSA1 IPI90R1K2C3XKSA1 Hersteller : Infineon Technologies Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123a85db6ae5bb3 Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH