IPI90R1K2C3XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
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Technische Details IPI90R1K2C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 310µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V.