IPL60R075CFD7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Polarisation: unipolar
Gate charge: 67nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IPL60R075CFD7 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4, Polarisation: unipolar, Gate charge: 67nC, Technology: OptiMOS™, Kind of channel: enhancement, Gate-source voltage: ±20V, Mounting: SMD, Case: PG-VSON-4, Drain-source voltage: 600V, Drain current: 21A, On-state resistance: 0.149Ω, Type of transistor: N-MOSFET, Power dissipation: 189W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPL60R075CFD7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IPL60R075CFD7 | Hersteller : Infineon Technologies | Infineon HIGH POWER_NEW |
Produkt ist nicht verfügbar |
|
|
|
IPL60R075CFD7 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4 Polarisation: unipolar Gate charge: 67nC Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-VSON-4 Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.149Ω Type of transistor: N-MOSFET Power dissipation: 189W |
Produkt ist nicht verfügbar |