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Technische Details IPL60R075CFD7 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 21A, Power dissipation: 189W, Case: PG-VSON-4, Gate-source voltage: ±20V, On-state resistance: 0.149Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 67nC.
Weitere Produktangebote IPL60R075CFD7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPL60R075CFD7 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 189W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.149Ω Mounting: SMD Kind of channel: enhancement Gate charge: 67nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPL60R075CFD7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 189W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 189W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH