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IPL60R185CFD7

IPL60R185CFD7 INFINEON TECHNOLOGIES

IPL60R185CFD7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.346Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
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Technische Details IPL60R185CFD7 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 9A, Power dissipation: 85W, Case: PG-VSON-4, Gate-source voltage: ±20V, On-state resistance: 0.346Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 28nC.