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IPP070N06LG INF


Hersteller: INF

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Lieferzeit 21-28 Tag (e)
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Technische Details IPP070N06LG INF

Description: MOSFET N-CH 60V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 2V @ 150µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V.

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IPP070N06LG Hersteller : infineon 08+
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
IPP070N06L G IPP070N06L G Hersteller : Infineon Technologies IPB,IPP070N06L_G.pdf Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
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IPP070N06L G IPP070N06L G Hersteller : Infineon Technologies IPB,IPP070N06L_G.pdf MOSFET Discrete Semiconductor Products MOSFETs, GaNFETs - Single - MOSFET N-CH 60V 80A TO-220
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