IPW60R080P7 Infineon Technologies

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD, Type of transistor: N-MOSFET, On-state resistance: 80mΩ, Mounting: THT, Power dissipation: 129W, Polarisation: unipolar, Version: ESD, Technology: CoolMOS™ P7, Drain current: 23A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, Kind of package: tube, Case: PG-TO247-3.