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IPW60R330P6FKSA1

IPW60R330P6FKSA1 Infineon Technologies


IPx60R330P6.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO247-3
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Technische Details IPW60R330P6FKSA1 Infineon Technologies

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3, Mounting: THT, Case: PG-TO247-3, Kind of package: tube, Power dissipation: 93W, Polarisation: unipolar, Gate charge: 22nC, Technology: CoolMOS™ P6, Kind of channel: enhanced, Gate-source voltage: ±20V, Drain-source voltage: 600V, Drain current: 7.6A, On-state resistance: 0.33Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.

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IPW60R330P6FKSA1 IPW60R330P6FKSA1 Hersteller : INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Kind of package: tube
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R330P6FKSA1 IPW60R330P6FKSA1 Hersteller : INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Kind of package: tube
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar