IPW60R330P6FKSA1 Infineon Technologies
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Technische Details IPW60R330P6FKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3, Case: PG-TO247-3, Mounting: THT, Kind of package: tube, Drain-source voltage: 600V, Drain current: 7.6A, On-state resistance: 0.33Ω, Type of transistor: N-MOSFET, Power dissipation: 93W, Polarisation: unipolar, Gate charge: 22nC, Technology: CoolMOS™ P6, Kind of channel: enhancement, Gate-source voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPW60R330P6FKSA1
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IPW60R330P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 7.6A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 93W Polarisation: unipolar Gate charge: 22nC Technology: CoolMOS™ P6 Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW60R330P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 7.6A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 93W Polarisation: unipolar Gate charge: 22nC Technology: CoolMOS™ P6 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |