IPW60R330P6FKSA1 Infineon Technologies
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Technische Details IPW60R330P6FKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3, Mounting: THT, Case: PG-TO247-3, Kind of package: tube, Power dissipation: 93W, Polarisation: unipolar, Gate charge: 22nC, Technology: CoolMOS™ P6, Kind of channel: enhanced, Gate-source voltage: ±20V, Drain-source voltage: 600V, Drain current: 7.6A, On-state resistance: 0.33Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPW60R330P6FKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPW60R330P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Mounting: THT Case: PG-TO247-3 Kind of package: tube Power dissipation: 93W Polarisation: unipolar Gate charge: 22nC Technology: CoolMOS™ P6 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 7.6A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW60R330P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Mounting: THT Case: PG-TO247-3 Kind of package: tube Power dissipation: 93W Polarisation: unipolar Gate charge: 22nC Technology: CoolMOS™ P6 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 7.6A On-state resistance: 0.33Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |