IPW60R330P6FKSA1 Infineon Technologies
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Technische Details IPW60R330P6FKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: CoolMOS™ P6, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 7.6A, Power dissipation: 93W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.33Ω, Mounting: THT, Gate charge: 22nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPW60R330P6FKSA1
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IPW60R330P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 93W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
IPW60R330P6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 93W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |