IPW65R080CFDA Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.71 EUR |
| 10+ | 11.41 EUR |
| 100+ | 9.42 EUR |
| 480+ | 8.38 EUR |
| 1200+ | 7.83 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details IPW65R080CFDA Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3, Mounting: THT, Power dissipation: 391W, Polarisation: unipolar, Technology: CoolMOS™, Drain current: 27.4A, Kind of channel: enhancement, Drain-source voltage: 650V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: tube, Case: PG-TO247-3, On-state resistance: 80mΩ.
Weitere Produktangebote IPW65R080CFDA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPW65R080CFDA | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3 Mounting: THT Power dissipation: 391W Polarisation: unipolar Technology: CoolMOS™ Drain current: 27.4A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO247-3 On-state resistance: 80mΩ |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPW65R080CFDA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Mounting: THT
Power dissipation: 391W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 27.4A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
On-state resistance: 80mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Mounting: THT
Power dissipation: 391W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 27.4A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
On-state resistance: 80mΩ
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)