IPW65R080CFDA Infineon Technologies
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.5 EUR |
| 10+ | 9.08 EUR |
| 100+ | 7.57 EUR |
| 480+ | 6.74 EUR |
| 1200+ | 6 EUR |
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Technische Details IPW65R080CFDA Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 27.4A, Power dissipation: 391W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 80mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
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IPW65R080CFDA | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 27.4A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
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