IPZ40N04S5L-4R8 Infineon Technologies
auf Bestellung 4979 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 111+ | 1.34 EUR |
| 116+ | 1.24 EUR |
| 250+ | 1.14 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.91 EUR |
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Technische Details IPZ40N04S5L-4R8 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8, Case: PG-TSDSON-8, Mounting: SMD, Drain-source voltage: 40V, Drain current: 40A, On-state resistance: 6.7mΩ, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 48W, Polarisation: unipolar, Gate charge: 29nC, Technology: OptiMOS™ 5, Kind of channel: enhancement, Gate-source voltage: ±16V, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote IPZ40N04S5L-4R8
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IPZ40N04S5L-4R8 | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 48W Polarisation: unipolar Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S5L-4R8 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 48W Polarisation: unipolar Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |