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IPZ40N04S5L-4R8

IPZ40N04S5L-4R8 INFINEON TECHNOLOGIES


IPZ40N04S5L-4R8.pdf Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
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Technische Details IPZ40N04S5L-4R8 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8, Technology: OptiMOS™ 5, Mounting: SMD, Case: PG-TSDSON-8, Power dissipation: 48W, Application: automotive industry, Polarisation: unipolar, Gate charge: 29nC, Kind of channel: enhanced, Gate-source voltage: ±16V, Drain-source voltage: 40V, Drain current: 40A, On-state resistance: 6.7mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 5000 Stücke.

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IPZ40N04S5L-4R8 IPZ40N04S5L-4R8 Hersteller : INFINEON TECHNOLOGIES IPZ40N04S5L-4R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar