IRF1407LPBF Infineon Technologies
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Technische Details IRF1407LPBF Infineon Technologies
Description: MOSFET N-CH 75V 100A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF1407LPBF | Hersteller : International Rectifier |
Description: MOSFET N-CH 75V 100A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
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