IRF6216PBF-IR International Rectifier
Hersteller: International Rectifier
Description: MOSFET P-CH 150V 2.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Technische Details IRF6216PBF-IR International Rectifier
Description: MOSFET P-CH 150V 2.2A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.