IRF6711STRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 25V 19A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
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Technische Details IRF6711STRPBF Infineon Technologies
Description: MOSFET N-CH 25V 19A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: DIRECTFET™ SQ, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V.