IRFHM8363TR2PBF Infineon Technologies
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Technische Details IRFHM8363TR2PBF Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A, Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V, Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN-Dual (3.3x3.3).
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IRFHM8363TR2PBF | Hersteller : Infineon Technologies |
 Description: MOSFET 2N-CH 30V 11A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3) |
Produkt ist nicht verfügbar |