IRFHS8342TR2PBF Infineon Technologies
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Technische Details IRFHS8342TR2PBF Infineon Technologies
Description: MOSFET N-CH 30V 8.8A PQFN, Packaging: Cut Tape (CT), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PG-TSDSON-6, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
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IRFHS8342TR2PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 8.8A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PG-TSDSON-6 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
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