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IRG4RC20F

IRG4RC20F Infineon Technologies

fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IGBT 600V 22A 66W DPAK
Switching Energy: 190µJ (on), 920µJ (off)
Td (on/off) @ 25°C: 26ns/194ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Gate Charge: 27 nC
Test Condition: 480V, 12A, 50Ohm, 15V
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Technische Details IRG4RC20F Infineon Technologies

Description: IGBT 600V 22A 66W DPAK, Switching Energy: 190µJ (on), 920µJ (off), Td (on/off) @ 25°C: 26ns/194ns, Supplier Device Package: TO-252AA (DPAK), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Power - Max: 66 W, Current - Collector Pulsed (Icm): 44 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 22 A, Gate Charge: 27 nC, Test Condition: 480V, 12A, 50Ohm, 15V.