Produkte > IXYS > IXFQ80N25X3
IXFQ80N25X3

IXFQ80N25X3 IXYS


pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FB5329FB75A0C4&compId=IXFQ80N25X3.PDF?ci_sign=7536c7641f30ddaddfa252b951646f165975fbd7 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFQ80N25X3 IXYS

Description: MOSFET N-CH 250V 80A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V.

Weitere Produktangebote IXFQ80N25X3 nach Preis ab 8.94 EUR bis 8.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFQ80N25X3 IXFQ80N25X3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B0FB5329FB75A0C4&compId=IXFQ80N25X3.PDF?ci_sign=7536c7641f30ddaddfa252b951646f165975fbd7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ80N25X3 IXFQ80N25X3 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 250V 80A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ80N25X3 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH