IXFQ80N25X3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Drain-source voltage: 250V
Drain current: 80A
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
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Technische Details IXFQ80N25X3 IXYS
Description: MOSFET N-CH 250V 80A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V.
Weitere Produktangebote IXFQ80N25X3 nach Preis ab 8.94 EUR bis 8.94 EUR
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IXFQ80N25X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO3P Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO3P Drain-source voltage: 250V Drain current: 80A On-state resistance: 16mΩ |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ80N25X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 80A |
Produkt ist nicht verfügbar |
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| IXFQ80N25X3 | Hersteller : IXYS |
Description: MOSFET N-CH 250V 80A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V |
Produkt ist nicht verfügbar |