Technische Details IXSH80N120L2KHV IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W, Mounting: THT, Case: TO247-4, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -10...23V, Gate charge: 135nC, On-state resistance: 58mΩ, Drain current: 58A, Pulsed drain current: 198A, Power dissipation: 395W, Drain-source voltage: 1.2kV, Polarisation: unipolar, Kind of channel: enhancement.
Weitere Produktangebote IXSH80N120L2KHV
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXSH80N120L2KHV | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W Mounting: THT Case: TO247-4 Kind of package: tube Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -10...23V Gate charge: 135nC On-state resistance: 58mΩ Drain current: 58A Pulsed drain current: 198A Power dissipation: 395W Drain-source voltage: 1.2kV Polarisation: unipolar Kind of channel: enhancement |
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