auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.85 EUR |
| 10+ | 15.35 EUR |
| 120+ | 12.8 EUR |
| 510+ | 11.39 EUR |
| 1020+ | 10.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXSH80N120L2KHV IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W, Mounting: THT, Case: TO247-4, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -10...23V, Gate charge: 135nC, On-state resistance: 58mΩ, Drain current: 58A, Power dissipation: 395W, Drain-source voltage: 1.2kV, Pulsed drain current: 198A, Polarisation: unipolar, Kind of channel: enhancement.
Weitere Produktangebote IXSH80N120L2KHV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXSH80N120L2KHV | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W Mounting: THT Case: TO247-4 Kind of package: tube Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -10...23V Gate charge: 135nC On-state resistance: 58mΩ Drain current: 58A Power dissipation: 395W Drain-source voltage: 1.2kV Pulsed drain current: 198A Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |