| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.79 EUR |
| 10+ | 18.79 EUR |
| 120+ | 14.77 EUR |
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Technische Details IXSH80N120L2KHV IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W, Mounting: THT, Case: TO247-4, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -10...23V, Gate charge: 135nC, On-state resistance: 58mΩ, Drain current: 58A, Pulsed drain current: 198A, Power dissipation: 395W, Drain-source voltage: 1.2kV, Polarisation: unipolar, Kind of channel: enhancement.
Weitere Produktangebote IXSH80N120L2KHV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXSH80N120L2KHV | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W Mounting: THT Case: TO247-4 Kind of package: tube Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -10...23V Gate charge: 135nC On-state resistance: 58mΩ Drain current: 58A Pulsed drain current: 198A Power dissipation: 395W Drain-source voltage: 1.2kV Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXSH80N120L2KHV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH