IXSQ20N60B2D1 IXYS
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-3P
Current - Collector (Ic) (Max): 35 A
Gate Charge: 33 nC
Switching Energy: 380µJ (off)
Td (on/off) @ 25°C: 30ns/116ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
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Technische Details IXSQ20N60B2D1 IXYS
Description: IGBT PT 600V 35A TO-3P, Current - Collector (Ic) (Max): 35 A, Gate Charge: 33 nC, Switching Energy: 380µJ (off), Td (on/off) @ 25°C: 30ns/116ns, IGBT Type: PT, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A, Reverse Recovery Time (trr): 30 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk, Power - Max: 190 W, Voltage - Collector Emitter Breakdown (Max): 600 V.