IXSQ20N60B2D1 IXYS
Hersteller: IXYS
Description: IGBT PT 600V 35A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-3P
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Description: IGBT PT 600V 35A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-3P
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
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Technische Details IXSQ20N60B2D1 IXYS
Description: IGBT PT 600V 35A TO-3P, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A, Supplier Device Package: TO-3P, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/116ns, Switching Energy: 380µJ (off), Gate Charge: 33 nC, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 190 W.