 
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 1+ | 11.97 EUR | 
| 10+ | 8.27 EUR | 
| 100+ | 6.53 EUR | 
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Technische Details IXTA26P20P-TRL IXYS
Description: MOSFET P-CH 200V 26A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V. 
Weitere Produktangebote IXTA26P20P-TRL nach Preis ab 6.36 EUR bis 12.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IXTA26P20P-TRL | Hersteller : IXYS |  Description: MOSFET P-CH 200V 26A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V | auf Bestellung 178 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IXTA26P20P-TRL | Hersteller : Littelfuse |  Trans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||
|   | IXTA26P20P-TRL | Hersteller : IXYS |  Description: MOSFET P-CH 200V 26A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V | Produkt ist nicht verfügbar |