IXTH05N250P3HV IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W, Case: TO247HV, Mounting: THT, Features of semiconductor devices: standard power mosfet, Kind of package: tube, Polarisation: unipolar, Gate charge: 10.5nC, Reverse recovery time: 1.2µs, Drain current: 0.33A, Pulsed drain current: 1A, Gate-source voltage: ±20V, Power dissipation: 104W, On-state resistance: 110Ω, Kind of channel: enhancement, Drain-source voltage: 2.5kV, Type of transistor: N-MOSFET, Technology: Polar3™.