IXTH06N220P3HV IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A, Mounting: THT, Features of semiconductor devices: standard power mosfet, Case: TO247HV, Kind of package: tube, Drain-source voltage: 2.2kV, Drain current: 0.38A, On-state resistance: 80Ω, Type of transistor: N-MOSFET, Power dissipation: 104W, Polarisation: unipolar, Gate charge: 10.4nC, Technology: Polar3™, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 1.2A, Reverse recovery time: 1.1µs, Anzahl je Verpackung: 1 Stücke.