IXXN200N65A4 IXYS
Hersteller: IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
Anzahl je Verpackung: 1 Stücke
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Technische Details IXXN200N65A4 IXYS
Category: IGBT modules, Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B, Case: SOT227B, Max. off-state voltage: 650V, Semiconductor structure: single transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 1.2kA, Power dissipation: 1.25kW, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Technology: GenX4™; XPT™, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXXN200N65A4
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IXXN200N65A4 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B Case: SOT227B Max. off-state voltage: 650V Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX4™; XPT™ |
Produkt ist nicht verfügbar |