JANTX1N5806US.TR Semtech Corporation
Hersteller: Semtech Corporation
Description: DIODE GEN PURP 150V 2.5A
Qualification: MIL-PRF-19500/477
Grade: Military
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Technology: Standard
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Technische Details JANTX1N5806US.TR Semtech Corporation
Description: DIODE GEN PURP 150V 2.5A, Qualification: MIL-PRF-19500/477, Grade: Military, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -65°C ~ 175°C, Current - Average Rectified (Io): 2.5A, Capacitance @ Vr, F: 25pF @ 5V, 1MHz, Technology: Standard.