JANTX1N5806US.TR Semtech Corporation
Hersteller: Semtech CorporationDescription: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 2.5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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Technische Details JANTX1N5806US.TR Semtech Corporation
Description: DIODE GEN PURP 150V 2.5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 5V, 1MHz, Current - Average Rectified (Io): 2.5A, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V.