K4B4G1646E-BYK000 Samsung Semiconductor, Inc.
Hersteller: Samsung Semiconductor, Inc.
Description: DDR3-1600 4GB (256MX16)1.25NS CL
Packaging: Tray
Part Status: Active
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Description: DDR3-1600 4GB (256MX16)1.25NS CL
Packaging: Tray
Part Status: Active
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 224+ | 8.13 EUR |
| 448+ | 7.72 EUR |
| 672+ | 7.56 EUR |
| 896+ | 7.39 EUR |
| 1120+ | 6.91 EUR |
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Technische Details K4B4G1646E-BYK000 Samsung Semiconductor, Inc.
Description: DDR3-1600 4GB (256MX16)1.25NS CL, Packaging: Tray, Part Status: Active, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C, Voltage - Supply: 1.35V, Clock Frequency: 800 MHz, Memory Format: DRAM, Memory Interface: Parallel, Memory Organization: 256M x 16, DigiKey Programmable: Not Verified.