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LGB8207ATH LITTELFUSE


Hersteller: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Application: automotive industry; ignition systems
Power dissipation: 165W
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
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Technische Details LGB8207ATH LITTELFUSE

Category: SMD IGBT transistors, Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level, Collector-emitter voltage: 365V, Gate-emitter voltage: ±15V, Collector current: 20A, Pulsed collector current: 50A, Type of transistor: IGBT, Application: automotive industry; ignition systems, Power dissipation: 165W, Kind of package: reel; tape, Version: ESD, Features of semiconductor devices: logic level, Mounting: SMD, Case: D2PAK, Anzahl je Verpackung: 1 Stücke.

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LGB8207ATH Hersteller : LITTELFUSE Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Application: automotive industry; ignition systems
Power dissipation: 165W
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH