LGE3M160120B LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 14A, Pulsed drain current: 48A, Power dissipation: 134W, Case: TO247-3, Gate-source voltage: -5...20V, On-state resistance: 0.285Ω, Mounting: THT, Gate charge: 43nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.