LGE3M160120E LUGUANG ELECTRONIC

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 11A, Pulsed drain current: 38A, Power dissipation: 127W, Case: D2PAK, Gate-source voltage: -5...20V, On-state resistance: 0.285Ω, Mounting: SMD, Gate charge: 42nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.