LGE3M160120Q LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 138W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 43nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 50A
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3M160120Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W, Drain-source voltage: 1.2kV, Drain current: 16A, On-state resistance: 0.25Ω, Type of transistor: N-MOSFET, Power dissipation: 138W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 43nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 50A, Mounting: THT, Case: TO247-4, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3M160120Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| LGE3M160120Q | Hersteller : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 50A; 138W Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 138W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 43nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 50A Mounting: THT Case: TO247-4 |
Produkt ist nicht verfügbar |