LGE3M1K170B LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 3.5A, Pulsed drain current: 6A, Power dissipation: 69W, Case: TO247-3, Gate-source voltage: -5...20V, On-state resistance: 1.5Ω, Mounting: THT, Gate charge: 21.8nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.