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LGE3M40120Q LUGUANG ELECTRONIC

LGE3M40120Q.pdf Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
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Technische Details LGE3M40120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 39A, Pulsed drain current: 117A, Power dissipation: 300W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 69mΩ, Mounting: THT, Gate charge: 145nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC.