Produkte > LUGUANG ELECTRONIC > LGE3M40120Q

LGE3M40120Q LUGUANG ELECTRONIC

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Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 145nC
On-state resistance: 69mΩ
Power dissipation: 300W
Drain current: 39A
Drain-source voltage: 1.2kV
Pulsed drain current: 117A
Kind of package: tube

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Technische Details LGE3M40120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W, Case: TO247-4, Mounting: THT, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 145nC, On-state resistance: 69mΩ, Power dissipation: 300W, Drain current: 39A, Drain-source voltage: 1.2kV, Pulsed drain current: 117A, Kind of package: tube.