LGE3M60065Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W, Mounting: THT, Kind of package: tube, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 78nC, On-state resistance: 75mΩ, Drain current: 36A, Pulsed drain current: 97A, Power dissipation: 208W, Drain-source voltage: 650V, Technology: SiC, Case: TO247-4, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.