LGE3M70120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W, Case: TO247-4, Drain-source voltage: 1.2kV, Drain current: 27A, On-state resistance: 0.122Ω, Type of transistor: N-MOSFET, Power dissipation: 200W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 69nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 85A, Mounting: THT, Anzahl je Verpackung: 1 Stücke.