LGE3M80120J LUGUANG ELECTRONIC

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: Kelvin terminal, Gate charge: 20.8nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -3...15V, Mounting: SMD, Case: D2PAK-7, Drain-source voltage: 1.2kV, Drain current: 23A, On-state resistance: 96mΩ, Type of transistor: N-MOSFET, Power dissipation: 136W, Anzahl je Verpackung: 1 Stücke.