LGEGW40N120F LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Turn-off time: 503ns
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 110W
Gate charge: 107nC
Type of transistor: IGBT
Turn-on time: 134ns
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.74 EUR |
| 17+ | 5.15 EUR |
| 19+ | 4.56 EUR |
| 30+ | 4.24 EUR |
| 120+ | 3.95 EUR |
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Technische Details LGEGW40N120F LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247, Collector current: 40A, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 120A, Features of semiconductor devices: integrated anti-parallel diode, Kind of package: tube, Turn-off time: 503ns, Mounting: THT, Collector-emitter voltage: 1.2kV, Power dissipation: 110W, Gate charge: 107nC, Type of transistor: IGBT, Turn-on time: 134ns.

