LGEGW40N120F LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.72 EUR |
| 17+ | 4.25 EUR |
| 20+ | 3.76 EUR |
| 30+ | 3.49 EUR |
| 120+ | 3.26 EUR |
| 240+ | 3.19 EUR |
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Technische Details LGEGW40N120F LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247, Type of transistor: IGBT, Power dissipation: 110W, Case: TO247, Mounting: THT, Gate charge: 107nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Collector current: 40A, Collector-emitter voltage: 1.2kV, Turn-on time: 134ns, Turn-off time: 503ns, Gate-emitter voltage: ±30V, Pulsed collector current: 120A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW40N120F nach Preis ab 3.26 EUR bis 4.72 EUR
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LGEGW40N120F | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Pulsed collector current: 120A |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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