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LGEGW40N120F LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D58F04A27BA0DF&compId=LGEGW40N120F.pdf?ci_sign=34bfd58e82610e625b2c324fae182c73a7102b29

Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 134ns
Turn-off time: 503ns
Features of semiconductor devices: integrated anti-parallel diode

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Technische Details LGEGW40N120F LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247, Type of transistor: IGBT, Power dissipation: 110W, Case: TO247, Mounting: THT, Gate charge: 107nC, Kind of package: tube, Collector-emitter voltage: 1.2kV, Gate-emitter voltage: ±30V, Collector current: 40A, Pulsed collector current: 120A, Turn-on time: 134ns, Turn-off time: 503ns, Features of semiconductor devices: integrated anti-parallel diode.