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LGEGW40N120F LUGUANG ELECTRONIC


LGEGW40N120F.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 503ns
Power dissipation: 110W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 107nC
Turn-on time: 134ns
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Technische Details LGEGW40N120F LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247, Collector current: 40A, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 120A, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 503ns, Power dissipation: 110W, Collector-emitter voltage: 1.2kV, Type of transistor: IGBT, Kind of package: tube, Mounting: THT, Gate charge: 107nC, Turn-on time: 134ns.