LGEGW40N120F LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 503ns
Power dissipation: 110W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 107nC
Turn-on time: 134ns
| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 17+ | 4.35 EUR |
| 19+ | 3.83 EUR |
| 30+ | 3.56 EUR |
| 120+ | 3.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details LGEGW40N120F LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247, Collector current: 40A, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 120A, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 503ns, Power dissipation: 110W, Collector-emitter voltage: 1.2kV, Type of transistor: IGBT, Kind of package: tube, Mounting: THT, Gate charge: 107nC, Turn-on time: 134ns.

