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LGEGW40N120F2

LGEGW40N120F2 LUGUANG ELECTRONIC

LGEGW40N120F2.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
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Technische Details LGEGW40N120F2 LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 40A, Power dissipation: 417W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 160A, Mounting: THT, Gate charge: 250nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 135ns, Turn-off time: 270ns.