LGEGW40N120F2 LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.73 EUR |
| 17+ | 4.26 EUR |
| 20+ | 3.76 EUR |
| 30+ | 3.49 EUR |
| 120+ | 3.26 EUR |
| 240+ | 3.19 EUR |
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Technische Details LGEGW40N120F2 LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 40A, Power dissipation: 417W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 160A, Mounting: THT, Gate charge: 250nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 135ns, Turn-off time: 270ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW40N120F2 nach Preis ab 3.49 EUR bis 4.73 EUR
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LGEGW40N120F2 | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 417W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 135ns Turn-off time: 270ns |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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