LGEGW40N120F2 LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.99 EUR |
| 16+ | 5.38 EUR |
| 18+ | 4.76 EUR |
| 30+ | 4.4 EUR |
| 120+ | 4.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details LGEGW40N120F2 LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247, Type of transistor: IGBT, Power dissipation: 417W, Case: TO247, Mounting: THT, Gate charge: 250nC, Kind of package: tube, Turn-on time: 135ns, Turn-off time: 270ns, Gate-emitter voltage: ±20V, Collector current: 40A, Pulsed collector current: 160A, Features of semiconductor devices: integrated anti-parallel diode, Collector-emitter voltage: 1.2kV.

