LGEGW50N65F1A LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 28+ | 2.62 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.14 EUR |
| 120+ | 2.02 EUR |
| 240+ | 1.94 EUR |
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Technische Details LGEGW50N65F1A LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 312W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 312W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Mounting: THT, Gate charge: 180nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 62ns, Turn-off time: 268ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW50N65F1A nach Preis ab 2.14 EUR bis 2.92 EUR
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LGEGW50N65F1A | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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