LGEGW50N65F1A LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Power dissipation: 312W
Case: TO247
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Turn-off time: 268ns
Collector current: 50A
Turn-on time: 62ns
Pulsed collector current: 150A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 3.02 EUR |
| 27+ | 2.7 EUR |
| 30+ | 2.39 EUR |
| 33+ | 2.22 EUR |
| 120+ | 2.09 EUR |
| 240+ | 2 EUR |
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Technische Details LGEGW50N65F1A LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 312W; TO247, Type of transistor: IGBT, Power dissipation: 312W, Case: TO247, Mounting: THT, Gate charge: 180nC, Kind of package: tube, Turn-off time: 268ns, Collector current: 50A, Turn-on time: 62ns, Pulsed collector current: 150A, Gate-emitter voltage: ±20V, Features of semiconductor devices: integrated anti-parallel diode, Collector-emitter voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW50N65F1A nach Preis ab 2.22 EUR bis 3.02 EUR
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LGEGW50N65F1A | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Power dissipation: 312W Case: TO247 Mounting: THT Gate charge: 180nC Kind of package: tube Turn-off time: 268ns Collector current: 50A Turn-on time: 62ns Pulsed collector current: 150A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 650V |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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