
LGEGW50N65F1A LUGUANG ELECTRONIC

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
25+ | 2.92 EUR |
28+ | 2.63 EUR |
34+ | 2.14 EUR |
36+ | 2.03 EUR |
120+ | 2.02 EUR |
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Technische Details LGEGW50N65F1A LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 312W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 312W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Mounting: THT, Gate charge: 180nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 62ns, Turn-off time: 268ns.