Produkte > LUGUANG ELECTRONIC > LGEGW50N65F1A
LGEGW50N65F1A

LGEGW50N65F1A LUGUANG ELECTRONIC

LGEGW50N65F1A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 268ns
Gate charge: 180nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 150A
Turn-on time: 62ns
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details LGEGW50N65F1A LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 312W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 312W, Case: TO247, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Turn-off time: 268ns, Gate charge: 180nC, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 150A, Turn-on time: 62ns.