
MAQ4123YME-TRVAO Microchip Technology

Description: IC MOSFET DVR 3A L-SIDE 8SOIC
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Rise / Fall Time (Typ): 11ns, 11ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 4.73 EUR |
10+ | 4.25 EUR |
25+ | 3.82 EUR |
100+ | 3.47 EUR |
250+ | 3.14 EUR |
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Technische Details MAQ4123YME-TRVAO Microchip Technology
Description: IC MOSFET DVR 3A L-SIDE 8SOIC, Packaging: Cut Tape (CT), Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.5V ~ 20V, Input Type: Inverting, Rise / Fall Time (Typ): 11ns, 11ns, Channel Type: Independent, Driven Configuration: Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Current - Peak Output (Source, Sink): 3A, 3A, Part Status: Active.