MG10P12P2

MG10P12P2 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
auf Bestellung 3600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+43.17 EUR
180+ 40.78 EUR
360+ 38.38 EUR
720+ 35.98 EUR
1440+ 32.38 EUR
3600+ 29.98 EUR
Mindestbestellmenge: 36
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Technische Details MG10P12P2 Yangjie Technology

Description: Transistors - IGBTs - Modules P2, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 105 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1 nF @ 25 V.

Weitere Produktangebote MG10P12P2

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MG10P12P2 Hersteller : YANGJIE TECHNOLOGY MG10P12P2.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 20A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG10P12P2 Hersteller : YANGJIE TECHNOLOGY MG10P12P2.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 20A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 10A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar