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MJD31CTF_NBDD001

MJD31CTF_NBDD001 onsemi

MJD31C.pdf
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details MJD31CTF_NBDD001 onsemi

Description: TRANS NPN 100V 3A DPAK, Power - Max: 1.56 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 3 A, Part Status: Obsolete, Supplier Device Package: DPAK, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).