MOT1113T4 Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.5 EUR |
| 10+ | 8.7 EUR |
| 100+ | 5.22 EUR |
| 500+ | 3.65 EUR |
| 1000+ | 3.11 EUR |
| 2000+ | 2.64 EUR |
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Technische Details MOT1113T4 Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Toll-, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 399A, Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V, Power Dissipation (Max): 455W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TOLT, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V.