MOT12N80HSF Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3+ | 8.4 EUR |
| 10+ | 5.04 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.8 EUR |
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Technische Details MOT12N80HSF Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 12A 1.3 To220F, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A, Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V, Power Dissipation (Max): 41W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.