MOT180N10E Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 1+ | 19.91 EUR |
| 10+ | 11.95 EUR |
| 100+ | 7.17 EUR |
| 500+ | 5.02 EUR |
| 800+ | 4.26 EUR |
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Technische Details MOT180N10E Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-263, Packaging: Tape & Reel (TR), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A, Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 260W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V.