MOT2620J Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| 5000+ | 0.21 EUR |
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Technische Details MOT2620J Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 20V 20A 9m PDFN3x, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 13W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-PDFN (3x3).