MOT50N03BD Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
| 2500+ | 0.16 EUR |
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Technische Details MOT50N03BD Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 40W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V.