MSC025SMB120B4N Microchip Technology
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| Anzahl | Preis |
|---|---|
| 1+ | 20.57 EUR |
| 30+ | 18.97 EUR |
| 120+ | 16.51 EUR |
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Technische Details MSC025SMB120B4N Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 57A; Idm: 193A; 357W, Case: TO247-4, Mounting: THT, Kind of package: tube, Type of transistor: N-MOSFET, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Family: SMB, Gate charge: 109nC, On-state resistance: 33mΩ, Power dissipation: 357W, Drain current: 57A, Drain-source voltage: 1.2kV, Pulsed drain current: 193A, Polarisation: unipolar, Kind of channel: enhancement.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSC025SMB120B4N | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 57A; Idm: 193A; 357W Case: TO247-4 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Technology: SiC Family: SMB Gate charge: 109nC On-state resistance: 33mΩ Power dissipation: 357W Drain current: 57A Drain-source voltage: 1.2kV Pulsed drain current: 193A Polarisation: unipolar Kind of channel: enhancement |
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